mosfet metaloxidesemiconductorfieldeffecttransistor baredie optimos?3powermostransistorchip IPC042N03L3 datasheet rev.2.5 final industrial&multimarket
2 optimos?3powermostransistorchip IPC042N03L3 rev.2.5,2014-07-25 final data sheet powermostransistorchip 1description ?n-channelenhancementmode ?fordynamiccharacterizationrefertothedatasheetofipd040n03lg ?aql0.65forvisualinspectionaccordingtofailurecatalogue ?electrostaticdischargesensitivedeviceaccordingtomil-std883c ?diebond:solderedorglued ?backsidemetallization:nivsystem ?frontsidemetallization:alcusystem table1keyperformanceparameters parameter value unit v (br)dss 30 v r ds(on) 4.0 1) m w die size 2.78 x 1.53 mm 2 thickness 175 m type/orderingcode package marking relatedlinks IPC042N03L3 chip not defined - 2electricalcharacteristicsonwaferlevel at t j =25c,unlessotherwisespecified table2 values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 30 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 1 - 2.2 v v ds = v gs , i d =250a zero gate voltage drain current i dss - - 1 a v gs =0v, v ds =30v gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on- resistance r ds(on) - - 3.7 2) 2.3 2) 50 3) 50 3) m w v gs =4.5v, i d =2.0a v gs =10v, i d =2.0a reverse diode forward on-voltage v sd - 0.83 1.1 v v gs =0v, i f =1a avalanche energy, single pulse e as - - 60 mj i d =50 a, r gs =25 w 1) packaged in a dpak using al bond wire (see ref. product) 2) typicalbaredie r ds(on) ; v gs =10vwhenusedwith4x500mal-wedgedouble-stitchbonding 3) limited by wafer test-equipment d r a i n g a t e s o u r c e
3 optimos?3powermostransistorchip IPC042N03L3 rev.2.5,2014-07-25 final data sheet 3packageoutlines figure1outlinechip,dimensionsinm d r a i n g a t e s o u r c e
4 optimos?3powermostransistorchip IPC042N03L3 rev.2.5,2014-07-25 final data sheet revisionhistory IPC042N03L3 revision:2014-07-25,rev.2.5 previous revision revision date subjects (major changes since last revision) 2.5 2014-07-25 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n g a t e s o u r c e
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